Experimental method constructed to design thin probe is by using series of thin film photolithography processes. Carrying out the experiment involves depositing thin film layer of silver, where this is deposited in the silicon base to form traces and loop which consist of major part of probe. While it is essential to cover the trace with insulating materials, the SU-8 is typically used in photolithography processes. It should be noted that chemical bath to separate the silver and SU-8 makes SU-8 act as an insulator between the two metal layers. Removing probe from silicon, the experimental result reveals that there will be result where a probe that will be form will be temporarily deform while in contact with the devices in the test. Despite the deformity, probe will still maintain it structural integrity. This procedure will produce probes with trace width ranging from 100 μm to 5 μm, and having line spacing that range from 60 μm to 5 μm. Illustration from Fig 1 reveals overall characteristics of probe, which consist of length, probe trace, and shielding while Fig 2 reveals cross section of bounded loop that reveal probe traces, conductive epoxy, and ground plane.|1]
The determination of chemical composition and thickness of thin film can be carried out by Energy Dispersive X-ray Spectroscopy (EDS-X) in a Scanning Electron Microscope. While this can be carried out by changing the energy of incident electron. With calculation of architecture of nominal layer, and an iteration process, there can be predicted relative intensity for each chemical element.[12].
