A number of factors contribute to the widespread use of semiconductors manufactured using FinFET technology. The factors include, among others, improved utilization of power and enhanced swing.6Â FinFET technology also reduces impurity scattering and surface scattering in the semiconductors. As a result, dopant fluctuations are reduced or eliminated from the semiconductors.3Â Higher on-current is also maintained while leakage is minimized in the semiconductors. As a result, the efficiency of the devices manufactured using these transistors is enhanced. Reduced impurity scattering and leakage of current associated with the use of the FinFETs also translates to lower power consumption
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